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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120D/D
Designer'sTM Data Sheet
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N-Channel Enhancement-Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co-packaged IGBT's save space, reduce assembly time and cost. * * * * * * Industry Standard High Power TO-264 Package (TO-3PBL) High Speed Eoff: 226 mJ per Amp typical at 125C High Short Circuit Capability - 10 ms minimum Soft Recovery Free Wheeling Diode is included in the package Robust High Voltage Termination Robust RBSOA
C
MGY25N120D
Motorola Preferred Device
IGBT & DIODE IN TO-264 25 A @ 90C 38 A @ 25C 1200 VOLTS SHORT CIRCUIT RATED
G E G C
E
CASE 340G-02, Style 5 TO-264
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJC RJA TL
Value 1200 1200 20 38 25 76 212 1.69 - 55 to 150 10 0.6 0.9 35 260 10 lbfSin (1.13 NSm)
Unit Vdc Vdc Vdc Adc Apk Watts W/C C
ms
C/W
C
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
(c) Motorola TMOS Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MGY25N120D
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 12.5 Adc) (VGE = 15 Vdc, IC = 12.5 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 25 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Gate Charge (VCC = 720 Vdc, IC = 25 Adc, VGE = 15 Vdc) DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 12.5 Adc) (IEC = 12.5 Adc, TJ = 125C) (IEC = 25 Adc) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. VFEC -- -- -- 2.89 1.75 3.65 3.50 -- 4.45 (continued) Vdc (VCC = 720 Vdc, IC = 25 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 125C) Energy losses include "tail" (VCC = 720 Vdc, IC = 25 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 91 124 196 310 2.44 3.14 5.58 88 126 236 640 5.40 5.03 10.43 62 22 25 -- -- -- -- 4.69 9.69 14.38 -- -- -- -- -- -- -- -- -- -- nC mJ ns mJ ns (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Cies Coes Cres -- -- -- 1859 198 30 -- -- -- pF VCE(on) -- -- -- VGE(th) 4.0 -- gfe -- 6.0 10 12 8.0 -- -- 2.37 2.15 2.98 3.24 -- 4.19 Vdc mV/C Mhos Vdc BVCES 1200 -- ICES -- -- IGES -- -- -- -- 100 2500 250 nAdc -- 960 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit
2
Motorola TMOS Power MOSFET Transistor Device Data
MGY25N120D
ELECTRICAL CHARACTERISTICS -- continued (TJ = 25C unless otherwise noted)
Characteristic DIODE CHARACTERISTICS -- continued Reverse Recovery Time (IF = 25 Adc, VR = 720 Vdc, dIF/dt = 150 A/s) Reverse Recovery Stored Charge Reverse Recovery Time (IF = 25 Adc, VR = 720 Vdc, dIF/dt = 150 A/s, TJ = 125C) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) LE -- 13 -- nH trr ta tb QRR trr ta tb QRR -- -- -- -- -- -- -- -- 114 71 43 0.65 226 165 61 1.90 -- -- -- -- -- -- -- -- C C ns ns Symbol Min Typ Max Unit
TYPICAL ELECTRICAL CHARACTERISTICS
75 TJ = 25C IC, COLLECTOR CURRENT (AMPS) 60 VGE = 20 V 17.5 V 15 V IC, COLLECTOR CURRENT (AMPS) 60 75 TJ = 125C VGE = 20 V 17.5 V 15 V
45
12.5 V
45
12.5 V
30 10 V 15
30 10 V 15
0
0
1
2
3
4
5
6
7
8
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25C
70 IC, COLLECTOR CURRENT (AMPS) 60 50 40 30 20 25C 10 0 4 6 8 10 12 14 16 VCE = 10 V 250 s PULSE WIDTH TJ = 125C VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 4
Figure 2. Output Characteristics, TJ = 125C
VGE = 15 V 250 s PULSE WIDTH IC = 20 A 3 15 A 10 A 2
1 - 50
0
50
100
150
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Transfer Characteristics
Figure 4. Collector-to-Emitter Saturation Voltage versus Junction Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3
MGY25N120D
10000 TJ = 25C Cies C, CAPACITANCE (pF) 1000 Coes 100 Cres C, CAPACITANCE (pF) 1000 10000 VGE = 0 V Cies TJ = 25C
100
Coes Cres
10
0
5
10
15
20
25
10
50
100
150
200
GATE-TO-EMITTER OR COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 5b. High Voltage Capacitance Variation
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
QT 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 TJ = 25C IC = 25 A Q1 Q2
TOTAL SWITCHING ENERGY LOSSES (mJ)
16
6 IC = 25 A 5.5 5 4.5 4 3.5 3 2.5 2 10 20 30 40 50 10 A 15 A VCC = 720 V VGE = 15 V TJ = 125C IC = 25 A
Qg, TOTAL GATE CHARGE (nC)
RG, GATE RESISTANCE (OHMS)
Figure 6. Gate-to-Emitter and Collector-to-Emitter Voltage versus Total Charge
Figure 7. Total Switching Losses versus Gate Resistance
TOTAL SWITCHING ENERGY LOSSES (mJ)
7 6 5 4 3 2
7 TURN-OFF ENERGY LOSSES (mJ) VCC = 720 V VGE = 15 V RG = 20 IC = 25 A 6 5 4 3 2 1 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 0 5 10 15 20 25 VCC = 720 V VGE = 15 V RG = 20 TJ = 125C
15 A
10 A 1 0
IC, COLLECTOR-TO-EMITTER CURRENT (AMPS)
Figure 8. Total Switching Losses versus Case Temperature
Figure 9. Turn-Off Losses versus Collector-to-Emitter Current
4
Motorola TMOS Power MOSFET Transistor Device Data
I , INSTANTANEOUS FORWARD CURRENT (AMPS) F
MGY25N120D
IC, COLLECTOR-TO-EMITTER CURRENT (A) 50 100
40 TJ = 125C TJ = 25C 20
10
30
1 VGE = 15 V RGE = 20 TJ = 125C 1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
10 0
0
1
2
3
4
5
0.1
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 10. Maximum Forward Drop versus Instantaneous Forward Current
Figure 11. Reverse Biased Safe Operating Area
1.0 D = 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t, TIME (s) 1.0E-01 t1 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0E+00 1.0E+01
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5
MGY25N120D
PACKAGE DIMENSIONS
0.25 (0.010) -B- -Q-
M
TB
M
-T- C
U N A R -Y- P K
1 2 3
E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125
L
F 2 PL G
W D 3 PL 0.25 (0.010)
M
J H YQ
S
DIM A B C D E F G H J K L N P Q R U W
STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER
CASE 340G-02 TO-264 ISSUE E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
MGY25N120D/D Motorola TMOS Power MOSFET Transistor Device Data
*MGY25N120D/D*


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